Category: Hardware

Micron’s 1z DRAM Node: The Third-Generation 10 nm-Class Process Technology

Understanding 10 nm-Class DRAM Nomenclature In the DRAM industry, “10 nm-class” refers to the half-pitch of the active area in the memory cell array rather than a precise transistor gate length as in logic processes. Generations within this class are labeled sequentially: Subsequent nodes shifted to Greek letters once the Roman alphabet was exhausted (1α… Read More Micron’s 1z DRAM Node: The Third-Generation 10 nm-Class Process Technology

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Micron 1y DRAM Node: The company’s second-Generation 10 nm-Class process Technology

Micron (and the broader DRAM industry) moved away from literal nanometer labels toward alphanumeric designations once feature sizes entered the teens of nanometers. The half-pitch of the active area in the memory cell array serves as the primary reference metric. The 10 nm-class spans roughly 10–19 nm half-pitch. Micron’s sequence begins with 1x (first generation),… Read More Micron 1y DRAM Node: The company’s second-Generation 10 nm-Class process Technology

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Micron 1x DRAM Node: The company’s first-Generation 10 nm-Class process Technology

Micron’s 1x DRAM node marked the company’s entry into the 10 nm-class era of memory manufacturing. It was the first-generation process in that class (typically corresponding to a half-pitch in the 17–19 nm range), succeeding earlier 20 nm-class nodes such as 2y nm and enabling smaller dies, higher bit density, and improved cost-per-bit for DDR4… Read More Micron 1x DRAM Node: The company’s first-Generation 10 nm-Class process Technology

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SK Hynix’s 1c DRAM Node: The company’s sixth-Generation 10 nm-Class process Technology

Overview of the 1c Node and Its Significance SK Hynix announced the industry’s first 16 Gb DDR5 DRAM built on its 1c process in August 2024. This marked the first time a memory maker had successfully scaled DRAM into the early 10 nm class at the sixth generation of the 10 nm family. The 10… Read More SK Hynix’s 1c DRAM Node: The company’s sixth-Generation 10 nm-Class process Technology

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SK Hynix’s 1b (1β) DRAM Node: The company’s fifth-Generation 10 nm-Class process Technology

SK Hynix’s 1b (1β/1-Beta) DRAM node represents the company’s fifth-generation 10 nm-class process technology, a critical step in DRAM scaling that delivered industry-leading speed, power efficiency, and density when introduced. DRAM Node Naming and the 10 nm-Class Progression DRAM manufacturers label successive shrinks within the 10 nm class using alphanumeric or Greek-letter designations rather than… Read More SK Hynix’s 1b (1β) DRAM Node: The company’s fifth-Generation 10 nm-Class process Technology

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SK Hynix’s 1a(1α/1-Alpha) DRAM Node: The company’s fourth-Generation 10 nm-Class process Technology

SK Hynix’s 1a DRAM node represents the company’s fourth-generation 10 nm-class process technology, marking a pivotal step in DRAM scaling through EUV lithography adoption, higher wafer productivity, and improved power efficiency. This node, often written as 1anm or D1a, followed the 1x, 1y, and 1z generations and enabled SK Hynix to expand high-density products such… Read More SK Hynix’s 1a(1α/1-Alpha) DRAM Node: The company’s fourth-Generation 10 nm-Class process Technology

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