Tag: DRAM

Samsung’s 1a (D1a) DRAM Node: Fourth-Generation 10 nm-Class Technology

What Is the 1a (D1a) DRAM Node? Samsung’s 1a DRAM node (internally designated D1a) represents the company’s fourth generation of 10 nm-class DRAM process technology. In DRAM nomenclature, the “1x” series refers to successive shrinks within the approximate 10–19 nm half-pitch range rather than a strict literal 10 nm node. The 1a node delivers meaningful… Read More Samsung’s 1a (D1a) DRAM Node: Fourth-Generation 10 nm-Class Technology

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Samsung’s 1z (D1z) DRAM node: The company’s third-generation 10 nm-class process technology

Samsung’s 1z (D1z / third-generation 10 nm-class) DRAM technology represents a pivotal step in the company’s DRAM scaling roadmap. It is the third generation within the broader 10 nm-class process family (following 1x and 1y), delivering higher bit density, improved manufacturing productivity, better power efficiency, and the first commercial use of extreme ultraviolet (EUV) lithography… Read More Samsung’s 1z (D1z) DRAM node: The company’s third-generation 10 nm-class process technology

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