Samsung’s 1c (sometimes cross-referenced with the industry-equivalent 1γ/1-gamma) DRAM node is the company’s sixth-generation 10 nm-class process technology. It represents a further shrink within the long-running “10 nm-class” DRAM family (preceded by 1x/1y/1z/1a/1b), targeting roughly the 11–12 nm range in critical dimensions. This places it as one of the densest planar (or near-planar) DRAM processes… Read More Samsung’s 1c (1γ/1-gamma) DRAM Node: The company’s Sixth-Generation 10 nm-Class process Technology

What Is the 1a (D1a) DRAM Node? Samsung’s 1a DRAM node (internally designated D1a) represents the company’s fourth generation of 10 nm-class DRAM process technology. In DRAM nomenclature, the “1x” series refers to successive shrinks within the approximate 10–19 nm half-pitch range rather than a strict literal 10 nm node. The 1a node delivers meaningful… Read More Samsung’s 1a (D1a) DRAM Node: Fourth-Generation 10 nm-Class Technology